High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides

The carrier mobility \mu of few-layer graphene (FLG) field-effect transistors increases ten-fold when the SiO_2 substrate is replaced by single-crystal epitaxial Pb(Zr_0.2Ti_0.8)O_3 (PZT). In the electron-only regime of the FLG, \mu reaches 7x10^4 cm^2/Vs at 300K for n = 2.4x10^12/cm^2, 70% of the intrinsic limit set by longitudinal acoustic (LA) phonons; it increases to 1.4x10^5 cm^2/Vs at low temperature. The temperature-dependent resistivity \rho(T) reveals a clear signature of LA phonon scattering, yielding a deformation potential D = 7.8+/-0.5 eV.Comment: 5 pages, 4 figure

Viability of Penaeus monodon eggs after simulated transport conditions

P. monodon spawners, transported from maturation pens suffer from stress which in turn may lead to lowered spawning rate or fertility. Spawning the females in the maturation site and transporting the eggs to the hatchery site is being considered as an alternative. Egg transport costs may be reduced to a minimum by using eggs from ablated spawners, transported at high density with no aeration. Experiments on higher egg densities as well as on transport of nauplii should, however, be undertaken

High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides

The carrier mobility μ of few-layer graphene (FLG) field-effect transistors increases tenfold when the SiO2 substrate is replaced by single-crystal epitaxial Pb(Zr0.2Ti0:8)O3 (PZT). In the electron-only regime of the FLG, μ reaches 7 X 104 cm2 / Vs at 300 K for n = 2.4 X 1012=cm2, 70% of the intrinsic limit set by longitudinal acoustic (LA) phonons; it increases to 1.4 X 105 cm2 / Vs at low temperature. The temperature-dependent resistivity p(T) reveals a clear signature of LA phonon scattering, yielding a deformation potential D = 7.8 ± 0.5 eV

Characterizing and modeling preferential flow using magnetic resonance imaging and multifractal theory.

bitstream/item/89956/1/Proci-07.00331.PD

Magnetic anisotropy modulation of magnetite in Fe3O4/BaTiO3(100) epitaxial structures

Temperature dependent magnetometry and transport measurements on epitaxial Fe3O4 films grown on BaTiO3(100) single crystals by molecular beam epitaxy show a series of discontinuities, that are due to changes in the magnetic anisotropy induced by strain in the different crystal phases of BaTiO3. The magnetite film is under tensile strain at room temperature, which is ascribed to the lattice expansion of BaTiO3 at the cubic to tetragonal transition, indicating that the magnetite film is relaxed at the growth temperature. From the magnetization versus temperature curves, the variation in the magnetic anisotropy is determined and compared with the magnetoelastic anisotropies. These results demonstrate the possibility of using the piezoelectric response of BaTiO3 to modulate the magnetic anisotropy of magnetite films.Comment: 4 pages, 4 figure